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MBR40100PT
High Tjm (+175oC) Schottky Barrier Diodes
A C(TAB) A C A C A Dimensions TO-247AD
Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode
MBR40100PT
VRRM V 100
VDC V 100
J K L M N
Symbol IF(AV) IFSM dv/dt
Characteristics Maximum Average Forward Rectified Current @TC=145oC
Maximum Ratings 40 300 10000 IF=20A IF=20A IF=40A IF=40A @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC @TJ=25oC @TJ=125oC 0.77 0.61 0.91 0.75 1.25 15 1.25 600 -55 to +175 -55 to +175
Unit A A V/us
Peak Forward Surge Current 10ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1)
VFM
V
IRM RthJC CT TJ TSTG
Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2)
mA
o
C/W pF
o o
Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any
MBR40100PT
High Tjm (+175oC) Schottky Barrier Diodes
10 00
10 00 10 0 1 0 1 .1 .0 1 .0 1 0 0 T =1 5C 7 J 1 0C 5 1 5C 2 1 0C 0 7 5C 5 0C 2 5C 2 0 4 0 6 0 8 0 10 0
10 0
I n t a t a eu Fr a d r r Fn - I s n no s o w u r C et
T =1 5C 7 J 1 0 T =1 5C 2 J T= 2 5C J
o aa nC ci t ace C p) p n- (F T
R v ene m e t r I rs ( C - ue
(A )
R
A )
R v rs V lta e- V (V ee e o g R)
Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage (Per Leg)
10 00
1
T =2 5C J
J uct i n
.1 0
.4
.8
1 .2
1 .6
2
10 0 0
2 0
4 0
6 0
8 0
10 0
F rw rdV lta eD p- V (V oa o g ro ) F M
R v rs V lta e- V (V ee e o g R)
Fig. 1 - Max. Forward Voltage Drop Characteristics (Per Leg)
1 0 /W ( ) C
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage (Per Leg)
1 T r am p m ce- Z he l I ea dn C th J
D=0 0 .5 D=0 3 .3 D=0 5 .2 D=0 7 .1 D=0 8 .0
P
D M t 1 t2
.1
.0 1 S g P ls in le u e (T e a R s ta c ) h rm l e is n e .0 1 0 .0 0 1 00 .0 0 01 .0 1 0 .0 1 .1
N te : os 1 D tyfa to D= t / t .u cr 12 2 P a T =P xZ . ek +T JD M th C C J 1 1 0 10 0
t , R c n u r P ls D ra n(S c n s e ta g la u e u tio eod) 1
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics (Per Leg)
MBR40100PT
High Tjm (+175oC) Schottky Barrier Diodes
10 8 15 7 A l ow C s Tm etu -() l a le a e e p r C b ra e 10 7 15 6 D C 10 6 15 5 10 5 0
A e a ePwr L s - (Wt ts v r g o e os a)
1 8
Rth C(D ) =1 5 C C .2 /W J
D=0 8 .0 1 D=0 7 6 .1 D=0 5 .2 1 4 D=0 3 .3 .5 1 D=0 0 2 1 0 M im 8 R SL it 6 4 2 D C
5
1 0
1 5
2 0
2 5 (A )
3 0
0 0
5
1 0
1 5
2 0
2 5
3 0
A e g F rw rdC rre t - I v ra e o a un
FV (A )
A e g F rw rdC rre t - I v ra e o a un (A ) FV (A )
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
10000 At Any Rated Load Condition And With Rated RRM Applied V Following Surge
FSM
Non-Repetitive Surge Current - I
(A) 1000 100 10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current (Per Leg)
L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02
+
DUT
IR P460 F R = 25 ohm g
Vd = 25 Volt
CURRENT MONIT OR
Fig. 8 - Unclamped Inductive Test Circuit
Sirectifier
R

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